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LMG2656 is a 650V, 230m Ω GaN half bridge with integrated driver, protection, and current detection functions

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Description

Parameter Details
VDS (max) (V) 650
RDS(on) (mΩ) 230
ID (max) (A) 3.6
Features Bottom – side cooled, Built – in bootstrap diode, Cycle – by – cycle overcurrent protection, Half – bridge, Integrated current sense, Overtemperature protection
Rating Catalog
Operating temperature range (°C) -40 to 125
Parameter Details
Power – FET Configuration 650V GaN power – FET half bridge
GaN FETs Resistance 230mΩ low – side and high – side GaN FETs
Gate Drivers Integrated gate drivers with <100ns low propagation delays
Slew Rate Control Programmable turn – on slew rate control
Current – sense Emulation Current – sense emulation with high – bandwidth and high accuracy
Gate Drive Pins Low – side referenced (INH) and high – side referenced (GDH) high – side gate drive pins
Gate – drive Interlock Low – side (INL) / high – side (INH) gate – drive interlock
Level Shifter High – side (INH) gate – drive signal level shifter
Bootstrap Diode Function Smart – switched bootstrap diode function
High – side Start – up High – side start up: <8μs
Overcurrent Protection Low – side / high – side cycle – by – cycle overcurrent protection
Overtemperature Protection Overtemperature protection
Quiescent Currents AUX idle quiescent current: 250μA; AUX standby quiescent current: 50μA; BST idle quiescent current: 70μA
Package 8mm × 6mm QFN package with dual thermal pads

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