| Drain-Source Voltage Rating (VDS(V)) |
1200 |
V |
The maximum voltage the device can withstand during operation |
| Gate-Source Voltage Rating (VGE(±V)) |
-4 / +22 |
V |
Represents the maximum negative and positive gate voltages that can be applied by the controller |
| Typical Gate Threshold Voltage Range (Vthtyp(V)) |
2~4 |
V |
The voltage that needs to be applied to the gate to start the device conduction |
| Typical On-State Drain-Source Resistance @ VGS=18V (RDS(on)@VGS=18Vtyp(mΩ)) |
80 |
mΩ |
The drain-source resistance of the device when conducting at the given gate voltage |
| Drain Current Rating (ID (A)) |
30 |
A |
The maximum current the device can withstand during operation |
| Technology |
SiC |
/ |
Indicates that the device is manufactured using silicon carbide material technology |
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