Description
| Parameter | Value | Unit |
|---|---|---|
| Product Model | VBP112MC63-4L | / |
| Package Type | TO247-4L | / |
| Configuration | Single N-type | / |
| Drain-Source Voltage (VDS（V）) | 1200 | V |
| Gate-Source Voltage (VGE（±V）) | -4 / +22 | V |
| Typical Threshold Voltage (Vthtyp(V)) | 2~5 | V |
| Typical On-Resistance @ VGS=18V (RDS(on)@VGS=18Vtyp(mΩ)) | 32 | mΩ |
| Drain Current (ID（A）) | 63 | A |
| Technology | SiC (Silicon Carbide) | / |
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